29
Sep
09

Nanosensing Transistors Powered by Stress

From Technology Review:

ACS/Nano Letters

ACS/Nano Letters

…new sensors consist of freestanding nanowires made of zinc oxide. When placed under stress, the nanowires generate an electrical potential, functioning as transistors.

Zhong Lin Wang, professor of materials science at Georgia Tech, has previously used piezoelectric nanowires to make nanogenerators that can harvest biomechanical energy, which he hopes will eventually be used to power portable electronics. Now Wang’s group is taking advantage of the semiconducting properties of zinc oxide nanowires–the electrical potential generated when the new nanowires are bent, allowing them to act as transistors.

Gee, maybe the global energy problem is solved! There’s plenty of stress out there.

Advertisements

0 Responses to “Nanosensing Transistors Powered by Stress”



  1. Leave a Comment

Leave a Reply

Fill in your details below or click an icon to log in:

WordPress.com Logo

You are commenting using your WordPress.com account. Log Out / Change )

Twitter picture

You are commenting using your Twitter account. Log Out / Change )

Facebook photo

You are commenting using your Facebook account. Log Out / Change )

Google+ photo

You are commenting using your Google+ account. Log Out / Change )

Connecting to %s


Umm, Delicious Bookmarks

Archives

RSS The Vortex

  • An error has occurred; the feed is probably down. Try again later.

%d bloggers like this: